Semiconductor device manufacturing method
AssigneeNEC Corporation
InventorKazumi Sugai
Life of this patent
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Abstract
A semiconductor device manufacturing method comprises the steps of depositing a first insulation coating on a substrate, forming a wiring groove on the first insulation coating, depositing aluminum or its alloy on the wiring groove, eliminating the aluminum or its alloy deposited over the other portion than the wiring groove, depositing a second insulation coating doped with at least B or P on the substrate, depositing a third insulation coating on the second insulation coating, applying a photoresist on the third insulation coating, and exposing the photoresist to a light of short wavelength.
Claims14
A semiconductor device manufacturing method, comprising the steps of:
- depositing an insulation coating doped with at least one of B and P on a substrate;
- applying a photoresist on the insulation coating;
- and
- exposing the photoresist to a light of short wavelength.
A semiconductor device manufacturing method, comprising the steps of:
- depositing a first insulation coating on a substrate;
- forming a wiring groove on the first insulation coating;
- depositing aluminum or its alloy on the wiring groove;
- eliminating the aluminum or its alloy deposited over the other portion than the wiring groove;
- depositing a second insulation coating doped with at least B or P on the substrate;
- depositing a third insulation coating on the second insulation coating;
- applying a photoresist on the third insulation coating;
- and
- exposing the photoresist to a light of short wavelength.
Dependencies are inferred from the claim text.