Method of growing gate oxides

A method for manufacturing a gate oxide film comprising:

• preparing a semiconductor substrate having a first and a second active region;
• forming a masking layer on the second active region;
• implanting germanium ions into the semiconductor substrate, wherein the germanium ions are piled up into the surface of the semiconductor substrate in the first active region and into the masking layer in the second active region;
• and
• forming a first and a second gate oxide film simultaneously on the first and the second active regions, respectively, wherein the first gate oxide film is thicker than the second gate oxide film.

A method for manufacturing a gate oxide film, comprising:

• preparing a semiconductor substrate having a first and a second active region and an isolation region therebetween;
• forming an isolation film on the isolation region;
• forming a masking layer on the second active region;
• implanting germanium ions into the semiconductor substrate, wherein the germanium ions are piled up into the surface of the semiconductor substrate in the first active region and the masking layer in the second active region;
• and
• forming a first and a second gate oxide film simultaneously on the first and the second active regions respectively, wherein the first gate oxide film is thicker than the second gate oxide film.