Method of planarizing a structure having an interpoly layer
AssigneeVanguard International Semiconductor Corporation
InventorsLiang-Gi Yao, Chung-Ju Lee, Yue-Feng Chen, Wei-Ray Lin, Yeur-Luen Tu
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Abstract
A method of planarizing a structure having an interpoly layer is disclosed. The method includes forming an undoped silica glass layer on at least a polysilicon region formed on a semiconductor substrate. Next, a spin-on-glass layer is formed over the undoped silica glass layer. Finally, the spin-on-glass layer is etched back, thereby planarizing the structure having the interpoly layer.
Claims20
A method of planarizing a semiconductor structure having an interpoly layer, the method comprising:
- forming an undoped silica glass layer on at least a polysilicon region formed on a semiconductor substrate, said undoped silica glass layer serving as the interpoly layer;
- forming a spin-on-glass layer over said undoped silica glass layer;
- and
- etching back said spin-on-glass layer until a flat surface of said undoped silica glass layer is achieved, thereby planarizing the structure having the interpoly layer.
A method of planarizing a semiconductor structure having an interpoly layer, the method comprising:
- forming an undoped silica glass layer on at least a polysilicon region formed on a semiconductor substrate, said undoped silica glass layer being formed by pyrolytic oxidation of ozone-tetraethylorthosilane, said undoped silica glass layer serving as the interpoly layer;
- densifying said undoped silica glass layer;
- forming a spin-on-glass layer over said undoped silica glass layer;
- and
- etching back said spin-on-glass layer until a flat surface of said undoped silica glass layer is achieved, thereby planarizing the structure having the interpoly layer.
A method of planarizing a structure having an interpoly layer, the method comprising:
- forming an undoped silica glass layer on at least a polysilicon region formed on a semiconductor substrate, said undoped silica glass layer being formed by pyrolytic oxidation of ozone-tetraethylorthosilane, said undoped silica glass layer serving as the interpoly layer;
- forming a spin-on-glass layer over said undoped silica glass layer;
- densifying said undoped silica glass layer;
- and
- etching back said spin-on-glass layer until a flat surface of said undoped silica glass layer is achieved, thereby planarizing the structure having the interpoly layer.
Dependencies are inferred from the claim text.