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US 6,143,660 AGranted
Method of producing a contact between a metallizing layer and a semiconductor material
AssigneeInfineon Technologies AG
InventorMatthias Stecher
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Abstract
A method for producing a low-impedance contact between a metallizing layer and a semiconductor material and a method for producing a capacitor. The two methods are adapted to one another such that in the course of a single process, both contacts and capacitors can be formed. In particular, by the methods of the invention, the insulation layer, which forms when the first dopant for the contact is forced inward, can be used as a capacitance dielectric of a capacitor.
Claims5
A method of producing a contact between a metallizing layer and a semiconductor material, which comprises the following steps:
- forming a silicon nitride layer on a semiconductor material and structuring the silicon nitride layer;
- forming a local SiO.sub.2 layer by thermal oxidation;
- introducing a further dopant into the semiconductor material and forcing the further dopant inward;
- and
- applying a metallizing layer on the semiconductor material.
2 more elements
Dependencies are inferred from the claim text.