US 6,143,642 A · Programmable semiconductor structures and methods for making the same

Abstract

Disclosed is a method for making a programmable structure on a semiconductor substrate. The semiconductor structure has a first dielectric layer. The method includes plasma patterning a first metallization layer over the first dielectric layer. Forming a second dielectric layer over the first metallization layer and the first dielectric layer. Forming a plurality of tungsten plugs in the second dielectric layer. Each of the plurality of tungsten plugs are in electrical contact with the first metallization layer. Plasma patterning a second metallization layer over the second dielectric layer and the plurality of tungsten plugs, such that at least a gap over each of the tungsten plugs is not covered by the second metallization layer. Applying a programming electron dose to a portion of the second metallization layer. The method further includes submersing the semiconductor substrate into a basic solution to remove each of the plurality of tungsten plugs except for a tungsten plug that is in electrical contact with the portion of the second metallization layer that received the applied programming electron dose.

Claims21

Dependent claims

A method for making a programmable structure on a semiconductor substrate having a first dielectric layer, comprising:

plasma patterning a first metallization layer over the first dielectric layer;
forming a second dielectric layer over the first metallization layer and the first dielectric layer;
forming a plurality of tungsten plugs in the second dielectric layer, such that each of the plurality of tungsten plugs are in electrical contact with the first metallization layer;
plasma patterning a second metallization layer over the second dielectric layer and the plurality of tungsten plugs, such that at least a gap over each of the tungsten plugs is not covered by the second metallization layer;
applying a programming electron dose to a portion of the second metallization layer;
and
submersing the semiconductor substrate into a basic solution to remove each of the plurality of tungsten plugs except for a tungsten plug that is in electrical contact with the portion of the second metallization layer that received the applied programming electron dose.

4 more elements

A method for fabricating programmable structures on a semiconductor substrate, comprising:

performing a plasma etch of a lower metallization layer that lies over a first dielectric layer that is deposited over the semiconductor substrate, such that a first lower metallization feature and a second lower metallization feature remains over the first dielectric layer;
depositing a second dielectric layer over the first lower metallization feature, the second lower metallization feature and the first dielectric layer;
forming a first tungsten plug and a second tungsten plug in the second dielectric layer, such that the first tungsten plug is in electrical contact with the first lower metallization feature and the second tungsten plug is in electrical contact with the second lower metallization feature;
performing a plasma etch of an upper metallization layer that lies over the second dielectric layer, such that a first upper metallization feature and a second upper metallization feature are respectively in electrical contact with the first tungsten plug and the second tungsten plug;
applying a dose of electrons to the first upper metallization feature;
and
submersing the semiconductor substrate in a basic solution until second tungsten plug is eroded, while the first tungsten plug remains.

4 more elements

Dependencies are inferred from the claim text.

Programmable semiconductor structures and methods for making the same

Life of this patent

Programmable semiconductor structures and methods for making the same

Life of this patent

Abstract

Claims21