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US 6,143,630 AGranted
Method of impurity gettering
AssigneeTexas Instruments Incorporated
InventorJohn H. Tregilgas
Life of this patent
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Abstract
A method of gettering impurities from substrates (304) such as CdTe and CdZnTe by formation of liquid droplets (306) of a lower melting point material such as Cd or Te on the substrate during an anneal. The droplets may form from the melting of a thin layer of the material which had been deposited on the substrate (304). A subsequent mechanical removal of the cooled and solidified droplets also removes the gettered impurities.
Claims11
A method of impurity gettering, comprising the steps of:
- (a) providing a substrate with solid gettering material on a surface of said substrate;
- (b) heating said substrate and gettering material to a first temperature greater than the melting point of said gettering material;
- (c) then cooling said substrate and gettering material to a second temperature below said melting point;
- and
- (d) removing said gettering material from said surface.
2 more elements
A method of impurity gettering, comprising the steps of:
- (a) providing a substrate with solid gettering material on a surface of said substrate;
- (b) heating said substrate and gettering material to a first temperature within 150.degree. C. of the melting point of said gettering material;
- (c) then cooling said substrate and gettering material;
- and
- (d) removing said gettering material from said surface.
2 more elements
A method of impurity gettering, comprising the steps of:
- (a) providing a substrate in fluid communication with a reservoir of gettering material;
- (b) heating said gettering material to a temperature above its melting point;
- (c) then condensing droplets of said gettering material on said substrate;
- (d) cooling said substrate and gettering material to solidify said droplets;
- and
- (d) then removing said gettering material from said surface.
3 more elements
Dependencies are inferred from the claim text.