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US 6,143,625 AGranted
Protective liner for isolation trench side walls and method
AssigneeTexas Instruments Incorporated
InventorsIh-Chin Chen, Amitava Chatterjee, Somnath S. Nag
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Abstract
An isolation trench (60) may comprise a trench (20) formed in a semiconductor layer (12). A barrier layer (22) may be formed along the trench (20). A protective liner (50) may be formed over the barrier layer (22). The protective liner (50) may comprise a chemically deposited oxide. A high density layer of insulation material (55) may be formed in the trench (20) over the protective liner (50).
Claims5
A method of forming an isolation trench of an integrated circuit, comprising the steps of:
- (a) forming a trench in a semiconductor layer;
- (b) forming a barrier layer along the trench;
- (c) chemically depositing an oxide protective liner over the barrier layer;
- (d) densifying the oxide protective liner from step (c);
- and
- (e) forming a high density layer of insulation material in the trench over the densified oxide protective liner.
3 more elements
Dependencies are inferred from the claim text.