Resist processing method
AssigneeTokyo Electron Limited
InventorsTakayuki Toshima, Nobuo Konishi
Life of this patent
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Abstract
A resist processing method includes (a), to a substrate having a circuit pattern with an uneven surface formed thereon, coating a photoresist solution to, by doing so, form a photoresist film, (b) subjecting the substrate to heat processing to cause a portion of the photoresist film to be chemically modified to create a modified resist layer of a substantially uniform thickness from the uneven surface of the circuit pattern, and (c) selectively removing only a resist portion unmodified at the step (b) to leave a modified resist layer on the uneven surface of the circuit pattern.
Claims13
A resist processing method comprising the steps of:
- (a) to a substrate having a circuit pattern with an uneven surface formed thereon, coating a photoresist solution to form a photoresist film;
- (b) chemically modifying a part of the photoresist film by heating the photoresist film from a reverse side of the substrate while cooling the photoresist film from a front side of the substrate, so that a modified resist layer of a substantially uniform thickness is formed from the uneven surface of the circuit pattern;
- (c) removing only a layer unmodified at the step (b) by bringing the photoresist film into contact with an organic solvent, thereby leaving the modified resist layer on the uneven surface;
- (d) patterning the modified resist layer by means of light exposure;
- and
- (e) post-exposure-baking the exposed modified resist layer.
Dependencies are inferred from the claim text.