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AssigneesWako Pure Chemical Industries, Ltd., Matsushita Electric Industrial Co., Ltd.
InventorsMotoshige Sumino, Akiko Katsuyama
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This invention relates to a resist composition comprising a polymer containing, as a constituent unit, a monomer unit shown by the general formula [1a] ##STR1## (wherein X is a polycyclic hydrocarbon residue which may have a substituent, Z is a spacer or a direct bond, and R is a substituted alkyl or alkenyl group having one or two protected hydroxyl groups as substituent), a photosensitive compound which can generate an acid upon exposure to light and a solvent which can dissolve the polymer and the photosensitive compound, and a method for formation of a pattern using the said resist composition. The said resist composition shows high sensitivity and high resolution ability in which a polymer having high transmittance against deep-ultraviolet lights having a wavelength of 220 nm or less, particularly ArF excimer laser beams. The said resist composition can remarkably advantageously be used as a resist material for ArF excimer laser beams which has been considered to be a valuable technology for exposure belonging to the coming generation.
A resist composition comprising a polymer containing, as a constituent unit, a monomer unit shown by the general formula [1a] ##STR35## (wherein X is a polycyclic hydrocarbon residue which may have a substituent, Z is a spacer or a direct bond, and R is a substituted alkyl or alkenyl group having one or two protected hydroxyl groups as substituent), a photosensitive compound which can generate an acid upon exposure to light and a solvent which can dissolve the polymer and the photosensitive compound.
A resist composition comprising a polymer, which is shown by the general formula [20] ##STR43## (wherein X is a polycyclic hydrocarbon residue which may have a substituent, Z is a spacer or a direct bond, R is a substituted alkyl or alkenyl group having one or two protected hydroxyl groups as substituent, R.sup.9 is a hydrogen atom, a lower alkyl group or a halogen atom, R.sup.10 is a hydrogen atom, a lower alkyl group, a halogen atom, a carboxyl group, an alkyloxycarbonyl group or a formyl group, R.sup.11 is a hydrogen atom, a lower alkyl group, a carboxyl group, an alkyloxycarbonyl group or a halogen atom, R.sup.12 is an alkylene group which may contain a double bond, or a direct bond, R.sup.13 is a hydrogen atom, an alkyl group, a haloalkyl group, an aliphatic heterocyclic group, a halogen atom, an alkyloxycarbonyl group, a hydroxyalkyloxycarbonyl group, an acyloxy group, a cyano group, a carboxyl group, a formyl group, a carbamoyl group or a hydroxy group, and R.sup.10 and R.sup.13 may form together a group of --CO--Q--CO-- {Q is O or N--R.sup.14 [R.sup.14 is a hydrogen atom or a lower alkyl group]}, G' is an alicyclic hydrocarbon residue, and R.sup.20 and R.sup.21 are each independently a hydrogen atom, an alkyl group, a group having hydrophilicity or an alkyloxycarbonyl group, and R.sup.20 and R.sup.21 may form together a dicarboximide group (--CO--NH--CO--), letters x, y and z satisfy x+y+z=1, provided that 0.10.ltoreq.x.ltoreq.0.99, 0.ltoreq.y.ltoreq.0.90, 0.ltoreq.z.ltoreq.0.90 and 0.01.ltoreq.y+z.ltoreq.0.90;
Dependencies are inferred from the claim text.