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US 6,143,357 AGranted
Aluminum complex derivatives for chemical vacuum evaporation and the method of producing the same
AssigneeRohm and Haas Company
InventorsHyun-Koock Shin, Hyun-Joo Shin
Life of this patent
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Abstract
Organometallic compounds useful for forming aluminum films by chemical vapor deposition are disclosed. Also disclosed are methods of preparing the organimetallic compounds and methods of forming aluminum films.
Claims8
An organometallic compound of the formula
- H.sub.3 Al:L.sub.n
- wherein L is one or more Lewis bases capable of providing an unshared electron pair to the aluminum and is selected from thiophene, thiopyran or an organic amine of formula II or VII ##STR18## wherein R is an alkyl having a carbon number of 1 to 4;
- R', R", R.sup.27, R.sup.28, R.sup.29, R.sup.30, R.sup.31, R.sup.32, R.sup.33 and R.sup.34 are each independently hydrogen or an alkyl group having carbon numbers of 1 to 2;
- m is an integer from 2 to 8;
- and
- n is 1 or 2.
3 more elements
A process for preparing an organometallic compound of the formula H.sub.3 Al:L.sub.n ;
- wherein L is one or more Lewis bases capable of providing an unshared electron pair to the aluminum and is selected from thiophene, thiopyran or an organic amine of formula II or VII, ##STR19## wherein R is an alkyl having a carbon number of 1 to 4;
- R', R", R.sup.27, R.sup.28, R.sup.29, R.sup.30, R.sup.31, R.sup.32, R.sup.33 and R.sup.34 are each independently hydrogen or an alkyl group having carbon numbers of 1 to 2;
- m is an integer from 2 to 8;
- and
- n is 1 or 2, comprising the steps of:
- a) forming a suspension of aluminum chloride and lithium aluminum hydride in hexane or pentane;
- and b) adding to the suspension said Lewis base.
4 more elements
Dependencies are inferred from the claim text.