Single crystal SiC and a method of producing the same

Abstract

A complex (M) which is formed by growing a polycrystalline .beta.-SiC plate 4 by the thermal CVD method on crystal orientation faces which are unified in one direction of plural plate-like single crystal .alpha.-SiC pieces 2 that are stacked and closely contacted is subjected to a heat treatment at a temperature in the range of 1,850 to 2,400.degree. C., whereby a single crystal which is oriented in the same direction as the crystal axes of the single crystal .alpha.-SiC pieces 2 is grown from the crystal orientation faces of the single crystal .alpha.-SiC pieces toward the polycrystalline .beta.-SiC plate 4. As a result, single crystal SiC of a high quality in which crystalline nuclei, impurities, micropipe defects, and the like are not substantially generated in an interface can be produced easily and efficiently.

Dependencies are inferred from the claim text.