Laser desorption of CVD precursor species
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
Life of this patent
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Abstract
Relatively cool chemical vapor deposition precursor particles are desorbed from a target by increasing the temperature of a selected target area at a heating rate of at least about 10.sup.6 K/sec such that heat energy causes the desorption of at least one CVD precursor particle intact from the target, such that intermediate bonds between the precursor particles and adjacent particles are heated at a higher rate than the precursor's internal bonds, or such that a substantial portion of heat energy is not transferred to the internal modes of the CVD precursor particle.
Claims7
A chemical vapor deposition apparatus comprising:
- a chamber defining a precursor desorption region;
- a target positioned within said precursor desorption region, said target comprising CVD precursor particles;
- a desorption heat source arranged to induce a predetermined temperature increase in a selected target area of said target by transferring heat energy to said selected target area, wherein said predetermined temperature increase is characterized by a predetermined heating rate, and wherein said predetermined heating rate is selected such that said heat energy causes the desorption of at least one CVD precursor particle to define a precursor desorption region and such that a substantial portion of said heat energy is not transferred to the internal energy modes of said CVD precursor particle;
- and
- a deposition substrate positioned in particulate communication with said precursor desorption region.
A chemical vapor deposition apparatus comprising:
- a chamber defining a precursor desorption region;
- a target positioned within said precursor desorption region, said target comprising CVD precursor particles bound to adjacent particles via intermediate bonds;
- a desorption heat source arranged to induce a predetermined temperature increase in a selected target area of said target, wherein said predetermined temperature increase is characterized by a predetermined heating rate, and wherein said predetermined heating rate is selected such that said intermediate bonds are heated at a higher rate than internal bonds of said precursor particles;
- and
- a deposition substrate positioned in particulate communication with said selected target area.
A chemical vapor deposition apparatus comprising:
- a chamber defining a precursor desorption region;
- a target positioned within said precursor desorption region, said target comprising CVD precursor particles;
- a desorption heat source arranged to induce a predetermined temperature increase in a selected target area of said target by transferring heat energy to said selected target area, wherein said predetermined temperature increase is characterized by a predetermined heating rate, and wherein said predetermined heating rate is selected such that said heat energy causes the desorption of at least one CVD precursor particle intact from said target;
- a deposition substrate positioned in particulate communication with said precursor desorption region;
- and
- a deposition region heat source arranged to heat said deposition substrate such that desorbed precursor particles, upon contact with said deposition substrate, migrate and decompose on said deposition substrate.
A chemical vapor deposition apparatus comprising:
- a chamber defining a precursor desorption region;
- a target positioned within said precursor desorption region, said target comprising CVD precursor particles and adjacent particles;
- a desorption heat source arranged to induce a predetermined temperature increase in a selected target area of said target, wherein said predetermined temperature increase is characterized by a heating rate of at least about 10.sup.6 K/sec;
- and
- a deposition substrate positioned in particulate communication with said precursor desorption region.
Dependencies are inferred from the claim text.