Electronic device manufacturing apparatus and method for manufacturing electronic device
AssigneeSharp Kabushiki Kaisha
InventorsOsamu Sakai, Katsuhiko Nomoto
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Abstract
An electronic device manufacturing apparatus includes: a reaction chamber including a wall having a ground potential level; a reaction gas inlet for introducing a reaction gas into the reaction chamber; a high frequency power generator for generating a high frequency voltage for exciting the reaction gas into plasma state or dissociated state; a cathode electrode connected to the high frequency power generator; and a floating capacitance formed between a potential level of the cathode electrode and the ground potential level. An impedance adjusting capacitor is inserted so as to be in series with the floating capacitance. The impedance adjusting capacitor has a capacitance value less than that of the floating capacitance.
Claims28
An electronic device manufacturing apparatus comprising:
- a reaction chamber including a wall having a ground potential level;
- a reaction gas inlet for introducing a reaction gas into the reaction chamber;
- a high frequency power generator for generating a high frequency voltage for exciting the reaction gas into plasma state or dissociated state;
- and
- a cathode electrode connected to the high frequency power generator;
- wherein
- a floating capacitance is defined between a potential level of the cathode electrode and the ground potential level,
- and further including an impedance adjusting capacitor positioned in series with the floating capacitance to suppress parallel resonance that occurs between the floating capacitance and a capacitance component formed between the cathode electrode and an anode electrode,
- the impedance adjusting capacitor having a capacitance value less than that of the floating capacitance.
An electronic device manufacturing apparatus comprising:
- a reaction chamber including a wall having a ground potential level;
- a reaction gas inlet for introducing a reaction gas into the reaction chamber;
- a high frequency power generator for generating a high frequency power for exciting the reaction gas into plasma state or dissociated state;
- and
- a cathode electrode connected to the high frequency power generator;
- wherein
- a floating capacitance is defined between a potential level of the cathode electrode and the ground potential level,
- and further wherein an impedance adjusting inductor is positioned in parallel with the floating capacitance such that said impedance adjusting inductor suppresses parallel resonance that occurs between the floating capacitance and a capacitance component formed between the cathode electrode and an anode electrode.
Dependencies are inferred from the claim text.