Method for curing spin-on-glass film utilizing electron beam radiation
AssigneeElectron Vision Corporation
InventorsWilliam R. Livesay, Matthew F. Ross, Anthony L. Rubiales
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AssigneeElectron Vision Corporation
InventorsWilliam R. Livesay, Matthew F. Ross, Anthony L. Rubiales
Estimating the term…
An electron beam exposure method is described which provides a means of curing spin-on-glass formed on a semiconductor wafer which insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured siloxane spin-on-glass is irradiated with electrons of sufficient energy to penetrate the entire thickness of the spin-on-glass and is simultaneously heated by infrared heaters. The wafer is exposed to a predetermined dose of electrons while simultaneously raised to a peak temperature in a soft vacuum environment. The electron beam and infrared heaters are then extinguished and the substrate cooled before removing from vacuum.
A method for curing spin-on-glass materials on a substrate, comprising the steps of:
A method for curing spin-on-glass materials on a substrate, comprising the steps of:
A method for curing spin-on-glass materials on a substrate, comprising the steps of:
A method for curing spin-on-glass materials on a substrate, comprising the steps of:
A method for curing spin-on-glass materials on a substrate, comprising the steps of:
Dependencies are inferred from the claim text.