Inverted thin film resistor and method of manufacture
AssigneeIntersil Corporation
InventorsWilliam R. Wade, Jack Linn
Life of this patent
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Abstract
An integrated circuit inverted thin film resistor structure and method of manufacture having interconnect defining resistor contacts and leads resident within and coplanar with a supporting layer, resistive material uniformly overlaying the supporting layer and contacts, the resistive material diffused into the resistor/interconnect contact region.
Claims14
A method of manufacturing an inverted resistor having an increased current carrying capacity resistor/interconnect junction comprising the steps of:
- a) defining a resistor contact path by trenching a substrate layer;
- b) embedding interconnect material into the defined resistor contact path to define a contact path resident within the substrate;
- c) planarizing the interconnect material and substrate layer to realize a single planar surface;
- d) forming a high current junction by overlaying at least a portion of the interconnect material with resistor material;
- and
- e) forming a resistor by selectively shaping the resistor material.
The method of enhancing stabilization intermixing within a resistor-contact junction formed between a metallic interconnect contact and overlaying resistor material during the manufacture of an inverted resistor comprising the steps of:
- a) providing a resistor material support layer with a resident metallic interconnect lead and contact material, offering a resistor material deposition site having an embedded resistor contact and lead;
- b) planarizing to expose the contact material in a coplanar relationship with the support layer surface;
- c) forming an resistor lead junction by overlaying a uniform thickness resistor material over at least part of the exposed contact material and support layer surface;
- and
- d) intermixing at the resistor lead junction the contact material and the adjacent resistor material.
Dependencies are inferred from the claim text.