Thin-film microstructure sensor having a temperature-sensitive resistor to provide a large TCR with little variation
AssigneesRicoh Company, Ltd., Ricoh Elemex Corporation
InventorsHiroyoshi Shoji, Takayuki Yamaguchi, Junichi Azumi, Yukito Sato, Morimasa Kaminishi
Life of this patent
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Abstract
A thin-film microstructure sensor includes a substrate having an insulation layer. A thin-film platinum temperature-sensitive resistor is provided on the insulation layer of the substrate, the thin-film platinum temperature-sensitive resistor comprising a platinum layer, the platinum layer having a maximum crystal grain size above a reference grain size of 800 .ANG.. The thin-film platinum temperature-sensitive resistor is formed by a sputtering process to provide a temperature coefficient of resistance TCR above a reference TCR level of 3200 ppm.
Claims6
A thin-film microstructure sensor comprising:
- a substrate having an insulation layer;
- a thin-film platinum temperature-sensitive resistor provided on the insulation layer of the substrate, said thin-film platinum temperature-sensitive resistor comprising at least one platinum layer, said at least one platinum layer having a maximum crystal grain size above a reference grain size;
- and
- an implementation board, two resistor chips provided on the implementation board and an enclosure case provided on the implementation board to hermetically seal one of the resistor chips, each of said resistor chips including the thin-film platinum temperature-sensitive resistor having a single platinum layer, the platinum layers of the resistor chips being provided to measure a humidity of an ambient atmosphere.
Dependencies are inferred from the claim text.