Field effect transistor having a floating gate
AssigneeInternational Business Machines Corporation
InventorsLouis L. Hsu, Jack A. Mandelman, Chih-Chun Hu
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Abstract
A field effect transistor which comprises a semiconductor substrate having a source region and a drain region separated by a channel region; a conductive floating gate formed over a first portion of the channel region adjacent to the doped source region and recessed into the semiconductor substrate; and being separated from the first portion of the channel region by a first insulation layer; and a conductive control gate formed substantially over but electrically isolated from the floating gate and formed over the entire channel region; along with a method for fabricating such is provided.
Claims8
A field effect transistor which comprises:
- a semiconductor substrate comprising a first doped source region and a second doped drain region separated by a channel region;
- a conductive floating gate formed over a first portion of said channel region adjacent to said first doped source region, and recessed into said semiconductor substrate and being separated from said first portion of said channel region by a first insulation layer;
- and a conductive control gate formed substantially over but electrically isolated from said floating gate and formed over the entire channel region including those portions not beneath said floating gate;
- and
- wherein gate oxide located on top of said floating gate is recessed into said semiconductor substrate.
Dependencies are inferred from the claim text.