US 6,087,064 A · Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method

Abstract

Novel silsesquioxane polymers are formed by methods which avoid the use of BBr.sub.3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26 N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.

Claims34

Dependent claims

A polymer blend comprising:

30 to 90 wt. % of a silsesquioxane polymer, wherein the silsesquioxane polymer includes a repeating unit having an R.sub.1 group and a repeating unit having an R.sub.2 group as described by the formula:
##STR7## wherein R.sub.1 is hydroxyphenylalkyl having at least 2 carbon atoms in its alkyl moiety and n is greater than zero, and wherein R.sub.2 is selected from the group consisting of alkyl, cycloalkyl, and aryl moieties, and wherein m is greater than zero;
and
70-10 wt. % of a non-silsesquioxane polymer.

1 more element

A negative photoresist composition, said photoresist composition comprising (a) a polymer component, (b) an acid-sensitive crosslinking agent, and (c) a photosensitive acid generator, said polymer component comprising 30 to 90 wt. % of a silsesquioxane polymer comprising a repeating unit having an R.sub.1 group and a repeating unit having an R.sub.2 group as described by the formula:

##STR9## wherein R.sub.1 is hydroxyphenylalkyl having at least 2 carbon atoms in its alkyl moiety and n is greater than zero, and wherein R.sub.2 is selected from the group consisting of alkyl, cycloalkyl, and aryl moieties, and wherein m is greater than zero;
and
70-10 wt. % of a non-silsesquioxane polymer.

Dependencies are inferred from the claim text.

Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method

Life of this patent

Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method

Life of this patent

Abstract

Claims34