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AssigneeLucent Technologies Inc.
InventorsSalvador Duenas, Ratnaji Rao Kola, Henry Y. Kumagai, Maureen Yee Lau, Paul A. Sullivan, King Lien Tai
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A thin film capacitor for use in semiconductor integrated circuit devices such as analog circuits, rf circuits, and dynamic random access memories (DRAMs), and a method for its fabrication, is disclosed. The capacitor has a dielectric thickness less than about 50 nm, a capacitance density of at least about 15 fF/.mu.m.sup.2, and a breakdown field of at least about 1 MV/cm. The dielectric material is a metal oxide of either titanium, niobium, or tantalum. The metal oxide can also contain silicon or nitrogen. The dielectric material is formed over a first electrode by depositing the metal onto the substrate or onto a first electrode formed on the substrate. The metal is then anodically oxidized to form the dielectric material of the desired thickness. A top electrode is then formed over the dielectric layer. The top electrode is a metal that does not degrade the electrical characteristics (e.g. the leakage current or the breakdown voltage) of the dielectric layer.
A capacitor comprising a first electrode, a layer of dielectric material with a thickness of about 50 nm or less formed over the first electrode by depositing a layer of metal selected from the group consisting of titanium, titanium nitride, niobium, niobium nitride, tantalum, tantalum silicide and tantalum nitride on the first electrode and anodically oxidizing the metal and a second electrode formed over the dielectric layer, wherein the capacitor has a capacitance density of at least about 15 fF/.mu.m.sup.2 and a breakdown field of at least about 1 MV/cm and wherein the capacitor is formed on a substrate.
Dependencies are inferred from the claim text.