Method and apparatus for forming features in holes, trenches and other voids in the manufacturing of microelectronic devices

A method of forming features within depressions in the manufacturing of microelectronic devices, comprising:

• covering an underlying layer of a substrate with a first layer of material, the underlying layer having a plurality of depressions under the first layer with vacant regions, and the first layer being deformable at a deformation temperature;
• forming a second layer of material on the first layer, the second layer being at least substantially stiff at the deformation temperature;
• and
• pressing the second layer against the first layer by applying a pressurized fluid against the second layer at a temperature at least equal to the deformation temperature to drive portions of the first layer into the vacant regions of the depressions in the underlying layer.

A method of forming a conductive feature on a substrate, comprising:

• forming a depression in a dielectric layer on the substrate;
• covering the dielectric layer and the depression with a conductive layer, the conductive layer having a first yield strength at a deformation temperature;
• fabricating a mechanical layer over the conductive layer, the mechanical layer having a second yield strength at the deformation temperature greater than the first yield strength;
• and
• applying a force to the mechanical layer at temperature at least as great as the deformation temperature by applying a pressurized fluid against the mechanical layer, the mechanical layer driving at least a portion of the conductive layer into the depression.

In the manufacturing of microelectronic devices on a substrate, a method of forming a dual damascene structure comprising:

• depositing a first dielectric layer over the substrate;
• planarizing the first dielectric layer;
• forming an etch-stop layer over the first dielectric layer;
• depositing a second dielectric layer over the etch-stop layer, the etch-stop layer and the second dielectric layer being selectively etchable from one another;
• boring contact holes through the second dielectric layer, the etch-stop layer and at least a portion of the first dielectric layer;
• etching the second dielectric layer to the etch-stop layer to form trenches in the second dielectric layer over the contact holes;
• depositing a conductive layer over the substrate, the conductive layer having a first yield strength at a fill temperature;
• covering the conductive layer with a mechanical layer, the mechanical layer having a second yield strength at the fill temperature greater than the first yield strength;
• pressing the mechanical layer against the conductive layer at a temperature at least as great as the fill temperature by applying a pressurized fluid against the mechanical layer, the mechanical layer driving at least a portion of the conductive layer into the contact holes and the trenches;
• removing at least a portion of the mechanical layer and the conductive layer between the lines to form dual damascene conductive structures in the contact holes and the trenches.

A method of forming features within depressions in the manufacturing of microelectronic devices, comprising:

• covering an underlying layer of a substrate with a first layer of material, the underlying layer having a plurality of depressions under the first layer with vacant regions;
• forming a second layer of material on the first layer, the second layer being less deformable than the first layer;
• and
• pressing the second layer against the first layer by applying a positive fluid pressure against the second layer to drive portions of the first layer into the vacant regions of the depressions in the underlying layer.