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US 6,033,977 AGranted
Dual damascene structure
AssigneeSiemens Aktiengesellschaft
InventorsMartin Gutsche, Dirk Tobben
Life of this patent
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Abstract
A method for manufacturing a dual damascene structure includes the use of a sacrificial stud and provides an improved defined edge on the interface between the conductive line openings and the via openings.
Claims6
A method of making a dual damascene structure comprising the steps of:
- a) forming a layer of sacrificial material on a semiconductor substrate including at least one conductive region formed therein;
- b) patterning the layer of sacrificial material to provide at least one stud over the conductive region;
- c) forming an intermetal dielectric layer on the semiconductor substrate surrounding the at least one stud;
- d) forming a conductive line opening in the intermetal dielectric layer, a portion of the at least one stud being exposed within the opening;
- e) removing the at least one stud from the intermetal dielectric layer by etching the at least one stud with BHF to provide a via for the dual damascene structure;
- and
- f) depositing a conductive material within the via.
4 more elements
Dependencies are inferred from the claim text.