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US 5,970,372 AGranted
Method of forming multilayer amorphous silicon antifuse
AssigneeXilinx, Inc.
InventorsMichael J. Hart, Kevin T. Look, Yakov Karpovich
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Abstract
Antifuses are provided which include first and second conductive layers and an antifuse layer positioned between the first and second conductive layers. The antifuse layer includes at least one oxide layer positioned between two amorphous silicon layers. Interconnect structures and programmable logic devices are also provided which include the antifuses.
Claims11
A method of forming an antifuse comprising:
- forming a first conductive layer;
- forming an antifuse layer having a thickness of less than about 100 nm on said first conductive layer, the antifuse layer including first and second undoped amorphous silicon layers and an oxide layer positioned between the first and second undoped amorphous silicon layers, wherein the oxide layer is grown from the first undoped amorphous silicon layer to a thickness of less than about 10 nm;
- and
- forming a second conductive layer on the antifuse layer.
1 more element
Dependencies are inferred from the claim text.