Method of removing metallic contaminants from simox substrate
AssigneeNEC Corporation
InventorKensuke Okonogi
Life of this patent
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Abstract
In a method of forming a silicon substrate, a gettering film is formed on a bottom surface of a silicon substrate. An oxygen ion implantation into a top surface of the silicon substrate is carried out at a substrate temperature in the range of 400.degree. C.-700.degree. C. The gettering film is removed from the silicon substrate. The silicon substrate is subjected to a heat treatment at a temperature of not less than 1300.degree. C. for causing a reaction of oxygen and silicon to form a silicon oxide film in the silicon substrate after the gettering film is removed.
Claims19
A method of forming a silicon substrate comprising the steps of forming a gettering film on a bottom surface of a silicon substrate;
- carrying out an oxygen ion implantation into a top surface of said silicon substrate at a substrate temperature in the range of 400.degree. C.-700.degree. C. after forming said gettering film;
- removing said gettering film from said silicon substrate after said oxygen ion implantation;
- subjecting said silicon substrate to a heat treatment at a temperature of not less than 1300.degree. C. for causing a reaction of oxygen and silicon to form a silicon oxide film in said silicon substrate after removing said gettering film.
A method of forming a silicon substrate comprising the steps of:
- forming a gettering film on a bottom surface of a silicon substrate;
- carrying out an oxygen ion implantation into a top surface of said silicon substrate at a substrate temperature in the range of 400.degree.C.-700.degree. C. after forming said gettering film;
- subjecting said silicon substrate to a first heat treatment in the range of 500.degree. C.-1000.degree. C. after said oxygen ion implantation;
- removing said gettering film from said silicon substrate after said first heat treatment;
- then
- subjecting said silicon substrate to a second heat treatment at a temperature of not less than 1300.degree. C. for causing a reaction of oxygen and silicon to form a silicon oxide film in said silicon substrate after removing said gettering film.
A method of forming a silicon substrate comprising the steps of:
- forming a first gettering film on a bottom surface of a silicon substrate;
- carrying out an oxygen ion implantation into a top surface of said silicon substrate at a substrate temperature in the range of 400.degree. C.-700.degree. C. after forming said first gettering film;
- subjecting said silicon substrate to a first heat treatment in the range of 500.degree. C.-1000.degree. C. after said oxygen ion implantation;
- removing said first gettering film from said silicon substrate after said first heat treatment;
- forming a second gettering film at least on said bottom surface of said silicon substrate after removing said first gettering film;
- then
- subjecting said silicon substrate to a second heat treatment at a temperature of not less than 1300.degree. C. for causing a reaction of oxygen and silicon to form a silicon oxide film in said silicon substrate after forming said second gettering film.
Dependencies are inferred from the claim text.