Method for forming a capacitor wherein the first capacitor plate includes electrically coupled conductive layers separated by an intervening insulative layer
AssigneeMicron Technology, Inc.
InventorBradley J. Howard
Life of this patent
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Abstract
A capacitor and method for forming a capacitor is disclosed and which includes providing a node to which electrical connection is to be made; forming a first layer of conductive material to a first thickness over and in electrical connection with the node; forming a second layer of insulative material to a second thickness over the first layer, the second thickness being greater than the first thickness; forming a third layer of conductive material to a third thickness over the second layer; forming the first, second and third layers into a first capacitor plate; and forming a capacitor dielectric layer and second capacitor plate operatively adjacent the first capacitor plate.
Claims11
A method for forming a capacitor comprising:
- providing a node to which electrical connection is to be made;
- forming a first layer of conductive material over and in electrical connection with the node;
- forming a second layer of an insulative dielectric material over the first layer, the second layer being selectively etchable relative to the first layer;
- forming a third conductive layer over the second layer, the second layer being selectively etchable, relative to the third layer, and wherein the first and third layers constitute different materials;
- removing the second layer of material selectively relative to the third and first layers to form a recess;
- forming a fourth layer of conductive material over the first, second and third layers to electrically couple the first and third layers together and form a first capacitor plate;
- and
- forming a capacitor dielectric layer and second capacitor plate operatively adjacent the first capacitor plate.
A method for forming a capacitor comprising:
- providing a node to which electrical connection is to be made;
- forming a first layer of conductive material over and in electrical connection with the node;
- forming a second layer of an insulative dielectric material over the first layer of conductive material, the second layer of material being selectively etchable relative to the first layer of material;
- forming a third layer of conductive material over the second layer, the second layer being selectively etchable relative to the third layer, and wherein the first and third layers constitute different material;
- forming a masking layer outwardly of the third layer of conductive material;
- subjecting the first, second, and third layers to conditions sufficient to define an outwardly facing sidewall of a first capacitor plate;
- removing the second layer of material selectively relative to the first and third layers of material to form a recess in the sidewall of the first capacitor plate between the first and third layers;
- forming a fourth layer of conductive material outwardly of the sidewall of the first capacitor plate to electrically couple the first and third layers of conductive material together;
- and
- forming a capacitor dielectric layer and a second capacitor plate operatively adjacent the first capacitor plate.
A method for forming a capacitor comprising:
- providing a node to which electrical connection is to be made;
- after providing the node, forming a finned capacitor plate in ohmic electrical contact with the node, the finned capacitor plate comprising a pair of spaced electrically conductive layers and an intermediate insulative layer, and wherein the insulative layer defines a recess between the pair of spaced, electrically conductive layers, and wherein the pair of spaced electrically conductive layers constitute different material;
- forming an electrically conductive interconnect layer outwardly of the insulative layer, at least a portion of the electrically conductive interconnect layer being received within the recess defined between the pair of spaced, electrically conductive layers;
- and
- forming a capacitor dielectric layer and second capacitor plate operatively adjacent the finned capacitor plate.
Dependencies are inferred from the claim text.