Semiconductor device having one or more asymmetric background dopant regions and method of manufacture thereof
AssigneeAdvanced Micro Devices, Inc.
InventorsJon Cheek, Mark I. Gardner, Michael Duane
Life of this patent
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Abstract
Semiconductor devices having one or more asymmetric background dopant regions and methods of fabrication thereof are provided. The asymmetric background dopant regions may be formed using a patterned mask with wider openings than conventional masks while substantially maintaining device performance. This can, for example, facilitate the fabrication process and allow greater flexibility in the choice of photolithography tools.
Claims21
A process of fabricating a semiconductor device, comprising:
- defining an active region including a channel region area and first and second source/drain region areas in a substrate;
- forming a patterned mask over the active region to expose the channel region area and a greater portion of the first source/drain region area than the second source/drain region area;
- implanting one or more background dopants into the masked active region to form one or more background dopant regions within the substrate that extend further into the first source/drain region area than the second source/drain region area;
- forming a gate electrode over the substrate after forming the patterned mask and implanting the one or more background dopants;
- and
- forming first and second source/drain regions in the first and second source/drain region areas respectively.
A process of fabricating a semiconductor device, comprising:
- defining an active region including a channel region area and first and second source/drain region areas in a substrate;
- forming a patterned mask over the active region to expose the channel region area, a portion of the first source/drain region area adjacent to the channel region area, and a portion of the second source/drain region area adjacent to the channel region area, wherein the exposed portion of the first source/drain region area is larger than the exposed portion of the second source/drain region area;
- implanting one or more background dopants into the masked active region to form one or more background dopant regions within the substrate that extend further into the first source/drain region area than the second source/drain region area;
- and
- forming first and second source/drain regions in the first and second source/drain region areas respectively.
A process of fabricating a semiconductor device, comprising:
- defining an active region including a channel region area and first and second source/drain region areas in a substrate;
- forming a patterned mask over the active region to expose the channel region area and a greater portion of the first source/drain region area than the second source/drain region area;
- implanting one or more background dopants into the masked active region to form one or more background dopant regions within the substrate, wherein the one or more background dopant regions extend from at least the first source/drain region area to the second source/drain region area;
- and
- forming first and second source/drain regions in the first and second source/drain region areas respectively.
Dependencies are inferred from the claim text.