Method of manufacturing a dynamic access memory which is suitable for increasing integration and suppressing generation of leakage current using an SOI structure

Abstract

A dynamic random access memory (DRAM) and a method of manufacturing the same which is suitable for increasing the integration of a semiconductor device and suppressing the generation of a leakage current using a silicon-on-insulator (SOI) structure are disclosed. The semiconductor device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, a semiconductor layer pattern formed on the insulating film, a trench formed in the semiconductor substrate through the semiconductor layer pattern and the insulating film, an electrode of a capacitor formed in the trench for electrically connected to the semiconductor layer pattern, a gate insulating film formed on the semiconductor layer pattern, a gate electrode formed on the gate insulating film, and impurity regions formed in the semiconductor layer pattern.

Dependencies are inferred from the claim text.