Ferroelectric film capacitor with intergranular insulation
AssigneeTexas Instruments Incorporated
InventorYasushiro Nishioka
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Abstract
A method of making ferroelectric film capacitors with sufficient yield for application to ULSI. In a first embodiment, after formation of a first ferroelectric film as the capacitor ferroelectric film, a very thin second ferroelectric film is deposited to fill the cavity portions generated between the crystal grains. This reduces the leakage current and increases the capacitor yield. In second embodiment, the cavity portions are filled with an insulating layer.
Claims15
A method for manufacturing a semiconductor device including a ferroelectric film capacitor having a laminated configuration, the method comprising:
- forming a substrate;
- forming a lower electrode over a portion the substrate;
- forming a first ferroelectric film over the lower electrode, the first ferroelectric film being crystallized and having intergranular cavities substantially passed through to the surface of the lower electrode;
- forming a second ferroelectric film over the first ferroelectric film, materials of the second ferroelectric film being filled in the intergranular cavities of the first ferroelectric film;
- and
- forming an upper electrode over the second ferroelectric film.
A method for manufacturing a semiconductor device including a ferroelectric film capacitor having a laminated configuration, the method comprising:
- forming a substrate;
- forming a lower electrode over a portion the substrate;
- forming a ferroelectric film over the lower electrode, the ferroelectric film being crystallized and having intergranular cavities substantially passed through to the surface of the lower electrode;
- forming an insulating oxide film, of a material different from the ferroelectric film, over the ferroelectric film, materials of the insulating oxide film being filled in the intergranular cavities of the ferroelectric film;
- and
- forming an upper electrode over the insulating oxide film.
Dependencies are inferred from the claim text.