Method and structure for optimizing the performance of a semiconductor device having dense transistors

A method of determining one or more relationships between one or more electrical properties and transistors density, comprising:

• forming a first test structure on a first substrate portion, the first test structure including a transistor having a gate electrode formed at a design width and a first line spacing;
• measuring a first one or more electrical properties of the transistor of the first test structure;
• forming a second test structure on a second substrate portion, the second test structure including a transistor having a gate electrode formed at the design width and at a second line spacing greater than the first line spacing;
• measuring a second one or more electrical properties of the transistor of the second test structure;
• developing one or more relationships between transistor electrical properties and transistor line spacing using the measured first and second one or more electrical properties the first line spacing and the second line spacing.

A method of determining a transistor electrical property to density relationship, comprising:

• forming a first test structure on a first substrate portion, the first test structure including a transistor having a gate electrode formed at a design width and a first density;
• measuring at least one electrical property of the transistor of the first test structure;
• forming a second test structure on a second substrate portion, the second test structure including a transistor having a gate electrode formed at the design width and a second density different than the first density;
• measuring at least one electrical property of the transistor of the second test structure;
• developing the transistor electrical property to density relationship using the measured at least one electrical property of the transistor of the first test structure and the measured at least one electrical property of the transistor of the second test structure and the first density and the second density.

A method of forming a semiconductor structure for use in determining a relationship between a transistor electrical property and transistor density, comprising:

• forming a first transistor on a first substrate portion, the first transistor having a first gate electrode formed at a design width and a first line spacing and two active regions disposed adjacent respective sides of the first gate electrode;
• forming a first set of contact structures each electrically connected to a respective one of the active regions of the first transistor;
• forming a second transistor on a second substrate portion, the second transistor having a second gate electrode formed at the design width and at a second line spacing different than the first line spacing and having two active regions disposed adjacent respective sides of the second gate electrode;
• and
• forming a second set of contact structures each electrically connected to a respective of the active regions of the second transistor, wherein the first set of contact structures has a physical relationship with respect to first gate electrode similar to a physical relationship of the second set of contact structures with respect to the second gate electrode.