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US 5,970,114 AGranted
X-ray mask and its fabrication method
AssigneeLG Semicon Co., Ltd.
InventorsDon-Hee Lee, Ki-Chang Song, Young-Sam Jeon, Chil-Keun Park
Life of this patent
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Abstract
Disclosed are X-ray masks exhibiting improved stability and reliability of the X-ray masks, and methods of making these masks. The X-ray masks include a membrane, an X-ray absorber pattern on the membrane, which is formed on a top side of a substrate, or an oxide layer between the membrane and the X-ray absorber pattern.
Claims11
A method of forming an X-ray mask, the method comprising the steps of:
- providing a substrate;
- forming a membrane on a top side of the substrate;
- forming a first oxide layer on the membrane;
- forming a second oxide layer on the first oxide layer;
- selectively removing the second oxide layer to form a second oxide layer pattern that exposes portions of the first oxide layer;
- forming an X-ray absorber layer on the second oxide layer pattern and on the exposed portions of the first oxide layer;
- and
- selectively removing the second oxide layer pattern and portions of the X-ray absorber layer to from an X-ray absorber pattern on the first oxide layer.
5 more elements
An X-ray mask comprising:
- a substrate;
- a membrane on a top side of the substrate;
- an oxide layer on the membrane;
- and
- an X-ray absorber pattern on the oxide layer.
2 more elements
Dependencies are inferred from the claim text.