Sram cell employing substantially vertically elongated pull-up resistors

An SRAM cell having at least four field effect transistors, the SRAM cell comprising:

• at least four transistor gates, an interconnect line, a Vcc line, and a pair of pull-up resistors;
• the four transistor gates having associated transistor diffusion regions operatively adjacent thereto;
• and
• the Vcc line and the interconnect line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates, the pull-up resistors being over the selected of the respective transistor diffusion regions.

An SRAM cell having at least four field effect transistors, the SRAM cell comprising:

• at least four transistor gates, an interconnect line, a Vcc line, and a pair of pull-up resistors;
• the four transistor gates having associated transistor diffusion regions operatively adjacent thereto;
• and
• the Vcc line and the interconnect line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates, the pull-up resistors extending within an opening in an insulative layer, and the pull-up resistors not completely filling the opening in the insulative layer.

An SRAM cell having at least four field effect transistors, the SRAM cell comprising:

• at least four transistor gates, an interconnect line, a Vcc line, and a pair of pull-up resistors;
• the four transistor gates having associated transistor diffusion regions operatively adjacent thereto;
• and
• the Vcc line and the interconnect line being provided in different respective elevational planes, the pull-up resistors being substantially vertically elongated between Vcc and selected of the respective transistor diffusion regions operatively adjacent the gates, the pull-up resistors extending within an opening in an insulative layer, the pull-up resistors comprising back-to-back diode constructions.