Use of calcium and strontium dopants to improve retention performance in a PZT ferroelectric film
AssigneeRamtron International Corporation
InventorsLee Kammerdiner, Tom Davenport, Domokos Hadnagy
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AssigneeRamtron International Corporation
InventorsLee Kammerdiner, Tom Davenport, Domokos Hadnagy
Estimating the term…
A lead zirconate titanate ferroelectric film used as the dielectric layer in a ferroelectric capacitor is doped with calcium and/or strontium, and the lead composition selected to improve data retention performance. The chemical formula for the ferroelectric film is: (Pb.sub.v Ca.sub.w Sr.sub.x La.sub.y)(Zr.sub.z Ti.sub.(1-z))O.sub.3 ; wherein v is ideally between 0.9 and 1.3; w is ideally between 0 and 0.1; x is ideally between 0 and 0.1; y is ideally between 0 and 0.1, and z is ideally between 0 and 0.9. In addition, the chemical composition of the ferroelectric film is further specified in that the measured opposite state charge at a specific time and temperature of the ferroelectric capacitor is greater than eight micro-Coulombs per square centimeter, and the rate of imprint degradation is less than fifteen percent per decade.
A ferroelectric film for use in a ferroelectric capacitor having increased retention performance comprising lead zirconate titanate doped with at least one dopant selected from the group consisting of calcium and strontium, and having a lead composition selected so that a corresponding measured opposite state charge of the ferroelectric capacitor is greater than eight micro-Coulombs per square centimeter, and the rate of imprint degradation is less than fifteen percent per decade.
Dependencies are inferred from the claim text.