Failure indicator for a protection component
AssigneeSGS-Thomson Microelectronics S.A.
InventorRobert Pezzani
Life of this patent
Estimating the term…
Abstract
A failure detector associated with a four-layer semiconductor protection component has a middle layer that corresponds to a low-doped semiconductor substrate of a first conductivity type. The component includes in this substrate, in addition to plurality of regions providing its protection function, at least one additional region of the second conductivity type connected to a test terminal.
Claims59
A failure detector integrated in a multi-region semiconductor protection component formed from a low-doped semiconductor substrate of a first conductivity type, wherein the multi-region semiconductor protection component includes in the substrate, in addition to regions providing its protection function, at least one additional region of a second conductivity type that is formed in a region of the multi-region semiconductor protection component having a lowest doping level of any region of the multi-region semiconductor protection component,the at least one additional region being connected to a test terminal to detect a destructive failure of the semiconductor protection component.
A failure detector integrated in a semiconductor protection component, comprising:
- a substrate of low-doped semiconductor material having a first conductivity type;
- a plurality of semiconductor regions disposed in the substrate to form the semiconductor protection component;
- and
- at least one additional region of the second conductivity type disposed in the substrate and forming a diode junction with the substrate, the at least one additional region, in combination with the substrate, forming the failure detector;
- wherein the failure detector detects a destructive failure of the semiconductor protection component.
An integrated circuit protection device, comprising:
- at least four regions of semiconductor material,
- a first region having a first conductivity type,
- a second region, contiguous with the first region, having a second conductivity type,
- a third region, contiguous with the second region, having the first conductivity type, and
- a fourth region, contiguous with the third region, having the second conductivity type;
- and
- at least one additional region, contiguous with the third region, to detect a permanently conductive state of a junction formed by the third and fourth regions, each at least one additional region being of the second conductivity type and forming a diode with the third region.
A device for protecting a telephone line against voltage surges, comprising:
- a semiconductor protection device including at least four regions of semiconductor material,
- a first region having a first conductivity type,
- a second region, contiguous with the first region, having a second conductivity type,
- a third region, contiguous with the second region, having the first conductivity type, and
- a fourth region, contiguous with the third region, having the second conductivity type;
- at least one additional region of the second conductivity type, contiguous with the third region and forming a diode with the third region, the diode detecting a permanently conductive state of a first reverse-biased junction formed between the second and third region;
- a biasing circuit, coupled to each at least one additional region, that maintains a predetermined voltage at the at least one additional region;
- and
- a current sensing device, coupled to the biasing circuit, that detects a forward biased current in the diode.
A device for protecting a telephone line against voltage surges, comprising:
- a semiconductor protection device including at least four regions of semiconductor material,
- a first region having a first conductivity type,
- a second region, contiguous with the first region, having a second conductivity type,
- a third region, contiguous with the second region, having the first conductivity type, and
- a fourth region, contiguous with the third region, having the second conductivity type;
- rectifier means, contiguous with the third region, for conducting a current in a first direction between the rectifier means and the third region, the rectifier means detecting a permanently conductive state of a first reverse-biased junction formed between the second and third region;
- a biasing circuit, coupled to the rectifier means, that maintains a predetermined voltage at the rectifier means;
- and
- a current sensing circuit, coupled to the biasing circuit, that detects a current conducted by the rectifier means.
A method of detecting a destructive failure of a semiconductor protection component having at least four consecutive regions of alternating conductivity type, the method comprising the steps of:
- generating a test current from the third region of the at least four consecutive regions in response to a current surge through the semiconductor protection component;
- detecting the test currents;
- indicating that the current surge through the semiconductor protection component has occurred;
- and
- continuing the steps of generating, detecting and indicating after the current surge has occurred when a junction between at least two of the at least four consecutive regions is destroyed.
An integrated circuit protection device, comprising:
- at least four regions of semiconductor material,
- a first region having a first conductivity type,
- a second region, contiguous with the first region, having a second conductivity type,
- a third region, contiguous with the second region, having the first conductivity type, and
- a fourth region, contiguous with the third region, having the second conductivity type;
- and
- at least one additional region, contiguous with the third region, to detect a permanently short-circuited state of a junction formed by the third and fourth regions, each at least one additional region being of the second conductivity type and forming a diode with the third region.
Dependencies are inferred from the claim text.