Correction method and correction apparatus of mask pattern

Abstract

A apparatus of correction of a mask pattern in which the mask pattern of a photomask to be used in a photolithographic step is deformed so that a transfer image near a desired design pattern is obtained, including an evaluation point system for arranging a plurality of evaluation points along an outer periphery of the desired design pattern; a simulation system for simulating the transfer image to be obtained where exposure is carried out under predetermined transfer conditions by using a photomask of a design pattern given the evaluation points; a comparison system for comparing a difference between the simulated transfer image and the design pattern for every evaluation point; and a deformation system for deforming the design pattern according to the difference compared for every evaluation point so that the difference becomes smaller.

Dependencies are inferred from the claim text.