High linearity capacitor using a damascene tungsten stud as the bottom electrode

A capacitor with a damascene tungsten lower electrode for use with an integrated circuit device, comprising:

• a plurality of portions of layers formed on an upper surface of a field oxide layer, wherein the upper surface of said substrate and side surfaces of said portions define a gap;
• a lower electrode comprising damascene tungsten filling said gap;
• an insulating layer on an upper surface of said stud and said portions, wherein said insulating layer has a conducting channel therethrough which couples electrically with said stud;
• an upper electrode on said insulating layer above said stud, said upper electrode being electrically insulated from said stud and said channel;
• and
• a contact on said insulating layer and electrically insulated from said upper electrode, said contact being electrically coupled with said stud via said channel.

A capacitor with a damascene tungsten lower electrode for use with an integrated circuit device, comprising:

• a plurality of portions of layers on a field oxide layer, wherein upper surface of said field oxide layer and side surfaces of said portions define a gap, and said portions comprise a nitride layer including Si.sub.3 N.sub.4 on said field oxide and an undoped oxide layer on said nitride layer;
• a lower electrode comprising damascene tungsten filling said gap;
• an insulating oxide layer on upper surface of said stud and said portions, wherein said insulating layer has a conducting channel therethrough which couples electrically with said stud, said channel is filled with tungsten and a channel liner comprising one or more materials selected from the group consisting of titanium and titanium nitride between said tungsten which fills said channel and walls of insulating material defining said channel
• an upper electrode on said insulating layer above said stud, said upper electrode being electrically insulated from said stud and said channel;
• and
• a contact on said insulating layer and electrically insulated from said upper electrode, said contact being electrically coupled with said stud via said channel
• a gap liner between said damascene tungsten and surfaces of said portions and said substrate defining said gap, wherein said gap liner comprises one or more materials selected from the group consisting of titanium and titanium nitride, wherein
• said tungsten lower electrode has an upper surface which is substantially coplanar with upper surfaces of said portions, said coplanarity being caused by chemical mechanical polishing of the upper surfaces of said tungsten and said portions,
• said portions are formed by depositing the nitride layer on said field oxide layer;
• depositing the oxide layer on said nitride layer;
• etching a portion of said oxide layer to the nitride layer;
• and etching said nitride layer beneath said etched portion of said oxide layer to said substrate with an etchant which is selective to nitride, said two etching steps leaving said portions forming and defining said gap, and
• said upper electrode and said tungsten lower electrode are separated by less than 1 micron.

A capacitor with a damascene tungsten stud as a lower electrode for use with an integrated circuit device, comprising:

• an upper electrode;
• a lower electrode comprising a damascene tungsten stud;
• a dielectric material between said lower electrode and said upper electrode;
• and
• a plurality of portions of layers on a field oxide layer, wherein upper surface of said field oxide layer and surfaces of said portions define a gap, said gap being filled by said stud.

A capacitor with a damascene tungsten stud as a lower electrode for use with an integrated circuit device, comprising:

• an upper electrode;
• a lower electrode comprising a damascene tungsten stud;
• and
• a dielectric material between said lower electrode and said upper electrode, wherein said upper electrode is polysilicon.

A capacitor with a damascene tungsten stud as a lower electrode for use with an integrated circuit device, comprising:

• an upper electrode;
• a lower electrode comprising a damascene tungsten stud;
• and
• a dielectric material between said lower electrode and said upper electrode, wherein said upper electrode and said tungsten lower electrode are separated by substantially 0.5 microns.