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US 5,969,391 AGranted
Complementary insulated-gate field-effect transistors having improved anti-latchup characteristic
AssigneeNissan Motor Co., Ltd.
InventorYutaka Tajima
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an N-well arranged in the principal surface of a P-type semiconductor substrate, an N.sup.+ well contact arranged in the principal surface of the N-well, and an N.sup.+ buried region arranged to the bottom of the N-well.
Claims13
A semiconductor device comprising:
- a substrate of a first conductivity type, said substrate having a surface;
- a well of a second conductivity type formed in said surface of said substrate, said well having a surface and a bottom;
- a first MOSFET formed in said substrate;
- a second MOSFET formed in said well, said second MOSFET cooperating with said first MOSFET to constitute a CMOS circuit;
- a first region of said second conductivity type formed in said well, said first region
- extending from said surface of said well to said bottom of said well,
- having an impurity concentration higher than that of said well, and
- being connected to a predetermined power source;
- and
- a second region of said second conductivity type formed under said bottom of said well, said second region
- being electrically connected to said first region,
- having an impurity concentration higher than that of said well, and
- underlying only part of said bottom of said well.
10 more elements
A semiconductor device, comprising:
- a substrate of a first conductivity type, said substrate having a surface;
- a well of a second conductivity type formed in said surface of said substrate, said well having a surface and a bottom;
- a first MOSFET formed in with said substrate;
- a second MOSFET formed in said well, said second MOSFET cooperating with said first MOSFET to constitute a CMOS circuit;
- a first region of said second conductivity type formed in said well, said first region
- extending from said surface of said well to said bottom of said well,
- having an impurity concentration higher than that of said well, and
- being connected to a predetermined power source;
- a second region of said second conductivity type formed under said bottom of said well, said second region
- being electrically connected to said first region,
- having an impurity concentration higher than that of said well, and
- covering less than all of said bottom of said well;
- and
- a contact arranged with said first region.
11 more elements
Dependencies are inferred from the claim text.