Method of manufacturing a semiconductor device having "shallow trench isolation"
AssigneeU.S. Philips Corporation
InventorPierre H. Woerlee
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Abstract
A method of manufacturing a semiconductor device, in which trenches (7) are formed in a surface (2) of a silicon body (1), which trenches are filled with silicon oxide (11). The filled trenches are used as field-oxide regions (12) in integrated circuits. The silicon oxide is deposited from a gas phase and is subsequently densified by means of a thermal treatment in an NO or N.sub.2 O-containing atmosphere. The deposited silicon oxide can be densified in a very short period of time, and, in addition, the thermal treatment does not cause crystal defects. The method can suitably be used for "single wafer processing".
Claims3
A method of manufacturing a semiconductor device, in which method trenches are formed in a surface of a silicon body which are filled with silicon oxide which is deposited from a gas phase and, subsequently, densified by means of a thermal treatment in a nitrogen-containing atmosphere, characterized in that the deposited silicon oxide is densified in an NO or N.sub.2 O-containing atmosphere.
Dependencies are inferred from the claim text.