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US 5,965,911 AGranted
Mos transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSuk-ho Joo, Choong-ryul Paik, Ki-hong Lee
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Abstract
A MOS transistor employing a titanium-carbon-nitride (TiCN) gate electrode is provided. The MOS transistor has a gate insulating film, a gate electrode, and a source/drain region on a semiconductor substrate. The gate electrode is formed of a single TiCN film or a double film having a TiCN film and a low-resistant metal film formed thereon. The TiCN gate electrode exhibits a low resistance of about 80-100 .mu..OMEGA.-cm and can control variations in Fermi energy level.
Claims3
A MOS transistor comprising:
- a semiconductor substrate provided with source and drain regions;
- a gate insulating film formed on the substrate;
- and
- a gate electrode deposited on the gate insulating film, wherein said gate electrode includes a TiCN film directly deposited on the gate insulating film.
1 more element
Dependencies are inferred from the claim text.