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US 5,965,909 AGranted
Semiconductor device having high gate turn-on voltage
AssigneeFujitsu Limited
InventorHitoshi Tanaka
Life of this patent
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Abstract
The semiconductor device comprises a substrate, a channel layer formed on the substrate, a first barrier layer formed on the channel layer, being an indirect transition semiconductor layer containing Al and P and being not lattice-matched with the substrate, and an electrode formed above the first barrier layer. The first barrier layer having a wide band gap and having a high barrier to electrons is formed below the electrodes, whereby a high gate turn-on voltage can be available.
Claims13
A semiconductor device comprising:
- a substrate;
- a channel layer formed on the substrate;
- a first barrier layer formed on the channel layer, being an indirect transition semiconductor layer containing Al and P, and being not lattice-matched with the substrate;
- and
- an electrode formed above the first barrier layer.
2 more elements
Dependencies are inferred from the claim text.