US 5,965,464 AGranted

Manufacturing method of double spacer structure for mixed-mode IC

AssigneeUnited Microelectronics Corp.

InventorsMeng-Jin Tsai, Cheng-Han Huang, Te-Chuan Liao, Chen-Wei Lee

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Abstract

A method for forming a double spacer structure comprising the steps of first providing a semiconductor substrate that has a first gate and a second gate already formed thereon, wherein the gate length of the second gate is greater than the gate length of the first gate. Then, a first insulating layer is formed over the substrate and the gates. Next, a photoresist layer is formed over the first insulating layer above the second gate while exposing the first insulating layer above the first gate. Subsequently, a first etching operation is performed to establish a first spacer structure along the sidewalls of the first gate, and then the photoresist layer is removed leaving the first insulating layer over the second gate. Thereafter, a second insulating layer is formed over the substrate, the first gate and the first insulating layer, and then a second etching operation is performed to establish a second spacer structure along the sidewalls of the second gate. Therefore, a second spacer that has a width greater than the first spacer does is finally obtained.

Claims20

Dependent claims

A method for manufacturing a double spacer structure for mixed mode IC, comprising the steps of:

(a) providing a semiconductor substrate having at least a first gate and a second gate, and further that the length of the second gate is larger than the length of the first gate;
(b) forming a first insulating layer above the substrate, the first gate and the second gate;
(c) forming a photoresist layer over the first insulation layer above the second gate while exposing the first insulation layer above the first gate;
(d) performing a first etching operation to etch the first insulation layer into a first layer of a first spacer along the sidewalls of the first gate, thereafter removing the photoresist layer leaving portions of the first insulation above the second gate;
(e) forming a second insulation layer over the substrate, the first gate and the first insulation layer;
and
(f) performing a second etching operation to etch the first insulation layer and the second insulation layer into a second spacer along the sidewalls of the second gate, and to form a second layer of the first spacer, wherein the width of the second spacer is greater than the width of the first spacer.

4 more elements

Dependencies are inferred from the claim text.