Method for removing crevices induced by chemical-mechanical polishing
AssigneeInternational Business Machines Corporation
InventorKlaus Dietrich Beyer
Life of this patent
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Abstract
A planarizing method involves a first polishing step in which a relatively hard, low compressibility pad removes excess material of a first layer and planarizes the first layer. Deep defects emanating from the polishing surface formed during the first polishing step are then enlarged and filled with a second layer. After filling, and optionally annealing, the second layer is planarized by polishing with a relatively soft and high compressibility pad or by anisotropic etching.
Claims25
A method of planarizing a semiconductor substrate comprising the steps:
- providing a semiconductor wafer including a substrate and a first layer formed thereon;
- planarizing the semiconductor wafer by chemically-mechanically polishing the first layer using a polishing pad of a hard, low compressibility material;
- enlarging defects in the first layer induced by the step of chemically-mechanically polishing using a pad of a hard, low compressibility material;
- forming a second layer including a dielectric material, for filling the enlarged defects in the first layer;
- and
- planarizing the second layer.
A method of planarizing a semiconductor wafer comprising the steps:
- providing a semiconductor wafer including a substrate and a first dielectric layer formed thereon;
- planarizing the semiconductor wafer by chemically-mechanically polishing the first dielectric layer using a polishing pad of a hard, low compressibility material;
- enlarging crevices in the first dielectric layer, the crevices induced by the step of planarizing the semiconductor wafer by chemically-mechanically polishing the first dielectric layer using a polishing pad of a hard, low compressibility material;
- forming a second dielectric layer for filling the enlarged crevices in the first dielectric layer;
- and
- planarizing the second dielectric layer.
Dependencies are inferred from the claim text.