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US 5,965,203 AGranted
Method for depositing a silicon oxide layer
AssigneeSiemens Aktiengesellschaft
InventorsZvonimir Gabric, Oswald Spindler
Life of this patent
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Abstract
A method for depositing a silicon oxide layer by ozone-activated gas phase deposition, uses tetraethyl orthosilicate (TEOS). An initially high gas flow ratio of TEOS to ozone is increasingly varied to a low steady-state ratio.
Claims8
A method for depositing a silicon oxide layer by ozone-activated gas phase deposition, using tetraethyl orthosilicate (TEOS), which comprises steadily reducing an initially high gas flow ration of TEOS to ozone to a low steady-state ratio below 1.
Dependencies are inferred from the claim text.