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US 5,965,047 AGranted
Rapid thermal processing (RTP) system with rotating substrate
AssigneeSteag AST
InventorsWerner Blersch, Peter Gruenwald, Michael Maurer, Helmut Merkle, Thomas Theiler, Heinrich Walk
Life of this patent
Estimating the term…
Abstract
A rapid thermal processing (RTP) chamber, wherein one wall of the chamber supporting a substrate rotates with respect to the rest of the chamber so that the substrate being treated in the RTP chamber is relatively rotated with respect to the lamps heating the substrate.
Claims22
A rapid thermal processing (RTP) chamber for processing a semiconductor wafer, comprising;
- a first wall, the first wall for supporting the semiconductor wafer in close proximity to the first wall, the first wall having a portion of the first wall transparent to radiation from radiation sources of an RTP system, the portion of the first wall transparent over at least an area of the first wall corresponding to the area of the sermiconductor wafer;
- and
- a second wall substantially parallel to the first wall, wherein the second wall is fixed with respect to the radiation sources and wherein the first wall is rotatable by rotation means with respect to the second wall about an axis perpendicular to the first wall, and wherein the rotation means allows uniform illumination of the water by radiation passing directly from the radiation sources through the transparent portion of the rotating wall.
A rapid thermal processing (RTP) system for processing a semiconductor wafer, comprising;
- a radiation source;
- a chamber, the chamber comprising a first wall;
- and a second wall substantially parallel to the first wall, the first wall for supporting the semiconductor wafer in close proximity to the first wall,the first wall having a portion of the first wall transparent to radiation from the radiation source, the portion of the first wall transparent over at least an area of the first wall corresponding to the area of the semiconductor wafer, and wherein the second wall is fixed with respect to the radiation sources, and wherein the first wall is rotatable by rotation means with respect to the second wall about an axis perpendicular to the first wall, and wherein the rotation means allows uniform illumination of the wafer by radiation passing directly from the radiation source through the transparent portion of the rotating first wall;
- means for introducing a gas into the chamber;
- and
- a means for controlling the radiation source and the means for introducing gas into the chamber.
3 more elements
A rapid thermal processing (RTP) chamber for processing a semiconductor wafer, comprising;
- a plurality of enclosing walls for enclosing an object, a portion of at least one enclosing wall transparent to radiation from a radiation source of an RTF system, at least a portion of at least a first enclosing wall rotatable with respect to the chamber when the chamber is closed, the first wall for supporting the semiconductor wafer in close proximity to the first wall, the first wall having a portion of the first wall transparent to radiation from the radiation source, the portion of first wall transparent over at least an area of the first wall corresponding to the area of the semiconductor wafer, and wherein the first wall is rotatable by rotation means with respect to the radiation source about an axis perpendicular to the first wall, and wherein the rotation means allows uniform illumination of the wafer radiation passing directly from the radiation source through the transparent portion of the rotating first wall.
A rapid thermal processing (RTP) chamber (10) for processing a semiconductor wafer (12) in an RTP-system, comprising;
- a first wall (54);
- a second wall (52) substantially parallel to the first wall (54);
- and
- a member (78) depending from the second wall (52), keeping a gap between the member (78) and the first wall (54),
- wherein the first wall (54) and the second wall (52) have at least one portion transparent to radiation from the radiation sources of the RTP-system, and
- the wherein first wall (54) is rotatable with respect to the second wall (52) and the member (78) about an axis perpendicular to the first wall (54).
3 more elements
Dependencies are inferred from the claim text.