Method of producing boron-doped monocrystalline silicon carbide
AssigneeSiemens Aktiengesellschaft
InventorsRene Stein, Roland Rupp
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Abstract
A CVD process or a sublimation process for doping an SiC monocrystal uses an organic boron compound whose molecules contain at least one boron atom chemically bonded to at least one carbon atom. Boron trialkyls are preferred organic boron compounds.
Claims17
A process for producing monocrystalline silicon carbide doped with boron by chemical vapor deposition on a substrate, comprising the steps of:
- a) supplying silicon and carbon by conveying at least one precursor into a recipient,
- b) supplying boron by conveying at least one organic compound whose molecules contain at least one carbon atom chemically bonded to at least one boron atom into a recipient,
- c) setting a crystallization surface of the substrate to at least 1000.degree. C.,
- d) forming a gas phase comprising the supplied silicon and carbon,
- e) establishing an excess of carbon compared to silicon in the gas phase, and
- f) growing monocrystalline silicon carbide on the crystallization surface from the at least one precursor and the at least one organic compound.
The process according to claim 11, wherein at least one silicon compound that does not contain carbon is used as the precursor to supply silicon and at least one carbon compound that does not contain silicon is used as the precursor to supply carbon.
The process according to claim 11, wherein the organic boron compound is related to a predetermined partial pressure, said partial pressure being set on the substrate between approximately 10.sup.-3 Pa and 1 Pa.
A process for producing monocrystalline silicon carbide doped with boron, comprising the steps of:
- a) at least partially subliming silicon carbide in its solid form,
- b) forming monocrystalline silicon carbide from the sublimed silicon carbide being in the vapor phase, and
- c) supplying boron using at least one organic boron compound whose molecules contain at least one carbon atom chemically bonded to at least one boron atom.
Dependencies are inferred from the claim text.