Method of forming aluminum film

A method of forming an aluminum film on a substrate assembly, the method comprising:

• forming an underlying layer over a semiconductor layer situated on a substrate assembly;
• depositing by a cold wall chemical vapor deposition process a first layer of aluminum over the underlying layer;
• depositing by an MOCVD process on the first layer of aluminum a species to achieve a surface passivation on a top surface of the first layer of aluminum and to form an alloy on the top surface of the first layer of aluminum, the alloy having an electromigration resistance greater than that of the first layer of aluminum, wherein the species is selected from the group consisting of O.sub.2, N.sub.2, TiCl.sub.4, TDMAT, SiH.sub.4, and GeH.sub.4, along with members of the halogen and interhalogen families of gases;
• and
• forming a second layer of aluminum over the first layer of aluminum.

A method of forming an aluminum film having a first thickness on a substrate assembly, the method comprising:

• forming a first layer of aluminum on a substrate assembly, the first layer of aluminum having a second thickness in a range from about one third of the first thickness to about one half of the first thickness;
• exposing the first layer of aluminum to a species selected from the group consisting of O.sub.2, N.sub.2, TiCl.sub.4, TDMAT, SiH.sub.4, and GeH.sub.4, along with the members of the halogen and interhalogen families of gases;
• and
• forming a second layer of aluminum over the first layer of aluminum.

A method of forming an aluminum structure over a substrate assembly, the method comprising:

• forming a contact opening through a portion of a substrate assembly;
• forming a first layer of aluminum on the substrate assembly, a portion of the first layer of aluminum extending into the contact opening;
• exposing the first layer of aluminum to a species to achieve a surface passivation on a top surface of the first layer of aluminum, wherein the species is selected from the group consisting of O.sub.2, N.sub.2, TiCl.sub.4, TDMAT, SiH.sub.4, and GeH.sub.4, along with members of the halogen and interhalogen families of gases;
• and
• forming a second layer of aluminum over the first layer of aluminum, a portion of the second layer of aluminum extending into the contact opening.