Method for tungsten nucleation from WF.sub.6 using titanium as a reducing agent
AssigneeLSI Logic Corporation
InventorsDerryl D.J. Allman, Verne C. Hornback, Ramanath Ganapathiraman, Leslie H. Allen
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Abstract
A method in a semiconductor process for forming a layer of a selected compound on a substrate of a semiconductor device. A layer of titanium is formed on the substrate as a sacrificial layer. The layer of titanium is reduced using a gaseous form of a fluorine containing compound in which the fluorine containing compound includes the selected compound that is to be formed on the substrate of the semiconductor device.
Claims29
A method in a semiconductor process for forming a layer of a selected reducing agent on a substrate of a semiconductor device:
- forming a layer of titanium on the substrate;
- and
- reducing the layer of titanium using a gaseous form of a fluorine containing compound, the fluorine containing compound including the selected reducing agent, wherein a layer of the selected reducing agent is formed on the substrate of the semiconductor device.
A method in a semiconductor process for forming a layer of a selected reducing agent on a substrate of a semiconductor device:
- forming a layer of titanium on the substrate;
- and
- reducing the layer of titanium using a gaseous form of a fluorine containing compound, the fluorine containing compound including the selected reducing agent, wherein a layer of the selected reducing agent is formed on the substrate of the semiconductor device wherein the substrate is silicon, wherein the step of forming a layer of titanium on the substrate comprises;
- forming a first layer of titanium on the substrate;
- forming a titanium nitride layer in contact with the first titanium layer;
- and
- forming a second titanium layer in contact with the titanium nitride layer, wherein the second titanium layer is the layer of titanium formed.
A method in a semiconductor process for forming a layer of a selected reducing agent on a substrate of a semiconductor device:
- forming a layer of titanium on the substrate;
- and
- reducing the layer of titanium using a gaseous form of a fluorine containing compound, the fluorine containing compound including the selected reducing agent, wherein a layer of the selected compound is formed on the substrate of the semiconductor device wherein the substrate is oxide and the fluorine containing compound is SiF.sub.4 and the selected reducing agent is Si.
A method of forming a semiconductor device including a tungsten plug comprising:
- forming a cavity in a substrate wherein the cavity has a bottom and sidewalls;
- forming a first layer of titanium on the bottom and sidewalls of the cavity;
- forming a layer of titanium nitride in contact with the first layer of titanium;
- forming a second layer of titanium in contact with the layer of titanium nitride;
- and
- reducing the second layer of titanium with WF.sub.6 in a gaseous form, wherein a layer of tungsten is formed.
A method in a semiconductor process for forming a layer of silicon on an insulator comprising the steps of:
- forming a layer of titanium on the insulator;
- and
- reducing the layer of titanium using SiF.sub.4 in a gaseous form, wherein a layer of polycrystalline or armorphous silicon is formed on the insulator.
A method in a semiconductor process for forming a layer of a selected reducing agent on a semiconductor device comprising:
- forming a layer of a nucleating compound, wherein the nucleating compound forms a fluorine gas biproduct in response to exposure to a fluorine containing compound in a gaseous form, wherein the fluorine containing compound includes the selected reducing agent;
- and
- exposing the layer to the fluorine containing compound in a gaseous form, wherein nucleation of the nucleating compound in the layer occurs forming the layer of the selected reducing agent, wherein the layer of the selected reducing agent is formed on the semiconductor device, replacing the layer of the nucleating compound.
A method in a semiconductor process for forming a layer of a selected reducing agent on a semiconductor device comprising:
- forming a layer of a nucleating compound, wherein the nucleating compound forms a fluorine gas biproduct in response to exposure to a fluorine containing compound in a gaseous form, wherein the fluorine containing compound includes the selected reducing agent;
- and
- exposing the layer to the fluorine containing compound in a gaseous form, wherein nucleation of the nucleating compound in the layer occurs forming the layer of the selected reducing agent, wherein the layer of nucleating compound is a layer of titanium and wherein the fluorine containing compound in gaseous form is SiF.sub.4 and the selected reducing agent is Si.
Dependencies are inferred from the claim text.