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US 5,963,825 AGranted
Method of fabrication of semiconductor fuse with polysilicon plate
AssigneeHyundai Electronics America
InventorsSteven S. Lee, Gayle W. Miller
Life of this patent
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Abstract
A fusible link and method for its fabrication. A polysilicon pad is formed on top of an insulating layer and covered with a second insulating layer. A trench is selectively etched into the second insulating layer exposing the top of the polysilicon pad. An fusible aluminum link is then formed over the second insulating layer and trench and conformal therewith. When a programming current is driven through the link, the aluminum melts and is absorbed by the polysilicon pad, thereby preventing the link's growback.
Claims8
A method for fabricating a semiconductor fuse, comprising:
- providing a first insulating layer;
- forming a polysilicon pad on top of said layer;
- forming a second insulating layer which covers said polysilicon pad and first insulating layer;
- selectively etching said second layer to provide a trench having sidewalls in said second insulating layer and a bottom formed by an upper surface of said polysilicon pad;
- and
- forming a fusible link across said second layer and trench and conformal therewith;
- wherein a programming current through said link melts said link, and said polysilicon pad absorbs the link when melted, thereby preventing the link's growback.
4 more elements
Dependencies are inferred from the claim text.