Method for forming field oxide or other insulators during the formation of a semiconductor device
AssigneeMicron Technology, Inc.
InventorNanseng Jeng
Life of this patent
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Abstract
A method for forming a semiconductor device comprises the steps of forming an oxide over a silicon layer, forming a blanket first nitride layer over the oxide layer and the silicon layer, and etching the first nitride layer and the oxide layer to form a sidewall from at least the oxide layer and the first nitride layer. Next, a second nitride layer is formed over the sidewall and an oxidizable layer is formed over the second nitride layer. The oxidizable and the second nitride layers are etched to form a spacer from the oxidizable layer from and the second nitride layer, and the oxidizable and the silicon layers are oxidized.
Claims12
A method used during the formation of a semiconductor device comprising the following steps:
- forming a first layer over a semiconductor layer, said first layer forming at least a portion of a sidewall;
- forming a second layer over said sidewall;
- forming a third layer over said second layer, wherein said first and second layers oxidize at a substantially slower rate than said third layer and said semiconductor layer;
- and
- oxidizing said third layer, a portion of said semiconductor layer, and oxidizing all of said second layer over said sidewall.
A method which reduces encroachment during the formation of a semiconductor device comprising the following steps:
- providing a wafer substrate assembly comprising at least a semiconductor wafer, an exposed first nitride layer formed over said wafer, a first oxide layer separating said wafer from said first nitride layer, an exposed second oxide layer formed on said wafer, and at least one sidewall formed from at least said first nitride layer and from said first oxide layer;
- forming a second nitride layer over said sidewall;
- forming a silicon layer on a portion of said second nitride layer and over a portion of said exposed second oxide layer;
- oxidizing said silicon layer, said semiconductor wafer, and completely oxidizing said second nitride layer.
A method used during the formation of a semiconductor device comprising the following steps:
- providing a wafer substrate assembly comprising at least a semiconductor wafer, an exposed first oxidation-resistant layer formed over said wafer, and a first oxide layer separating said wafer from said first oxidation-resistant layer;
- etching first oxidation-resistant layer, said first oxide layer, and said wafer to form a sidewall from said first oxidation-resistant layer, said first oxide layer, and said wafer, wherein said etch exposes said wafer and removes a portion of said first oxide layer between said first oxidation-resistant layer and said wafer to form a space therebetween;
- forming a second oxide layer on said exposed wafer;
- forming a second oxidation-resistant layer on said sidewall, wherein said second oxidation-resistant layer fills in said space;
- forming an oxidizable layer on said second oxidation-resistant layer;
- oxidizing said oxidizable layer, said second oxidation-resistant layer, and said wafer.
Dependencies are inferred from the claim text.