Method of fabricating shallow trench isolation
AssigneeUnited Silicon Incorporated
InventorShih-Ming Lan
Life of this patent
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Abstract
A method of fabricating a shallow trench isolation. On a substrate comprising a pad oxide layer and a mask layer on the pad oxide layer, a trench which penetrates through the mask layer, the pad oxide layer, and a part of the substrate is formed. A part of the mask layer is removed to form an opening on top of the trench, wherein the opening is wider than the trench. An insulation layer is formed on the mask layer to fill the opening and the trench. The insulation layer is etched until the mask layer is exposed. The mask layer is removed, so that a T-shape insulation plug is formed. The insulation plug and the pad oxide layer are etched until the insulation plug and the substrate are at a same level.
Claims9
A method of fabricating a shallow trench isolation, wherein a substrate comprising a pad oxide layer and a mask layer on the pad oxide layer is provided, comprising:
- forming a trench which penetrates through the mask layer, the pad oxide layer, and a part of the substrate;
- removing a part of the mask layer to form an opening on top of the trench, wherein the opening is wider than the trench;
- forming an insulation layer on the mask layer to fill the opening and the trench;
- etching the insulation layer until the mask layer is exposed;
- removing the mask layer, so that a T-shape insulation plug is formed;
- and
- etching the insulation plug and the pad oxide layer until the insulation plug and the substrate are at a same level.
A method of fabricating a shallow trench isolation, wherein a substrate comprising a pad oxide layer and a silicon nitride layer on the pad oxide layer is provided, comprising:
- forming a trench which penetrates through the silicon nitride layer, the pad oxide layer, and a part of the substrate;
- removing a part of the silicon nitride layer to form an opening on top of the trench, wherein the opening is wider than the trench;
- forming an oxide layer on the silicon nitride layer to fill the opening and the trench;
- etching the oxide layer until the silicon nitride layer is exposed;
- removing the silicon nitride layer, so that a T-shape oxide plug is formed;
- and
- etching the oxide plug and the pad oxide layer until the oxide plug and the substrate are at a same level.
Dependencies are inferred from the claim text.