Methods of determining parameters of a semiconductor device and the width of an insulative spacer of a semiconductor device

A method of determining a width of a structure comprising a second refractory metal silicide, the width being less than 0.5 microns, the method comprising:

• forming first and second field effect transistors having a common device width, the first field effect transistor comprising a first gate comprising a first refractory metal silicide having a width of greater than or equal to 0.5 microns, the second field effect transistor comprising a diffusion region and a second gate comprising a second refractory metal silicide having a width of less than 0.5 microns, the first and second gates having insulative lateral spacers of a substantially common width and common material;
• determining the common device width;
• determining the common width of the insulative lateral spacers;
• determining the width of the diffusion region of the second field effect transistor;
• and
• determining the width of the second gate using the common device width, the width of the diffusion region of the second field effect transistor and the common width of the insulative lateral spacers.

A method of determining parameters of a semiconductor device comprising a refractory metal silicide comprising:

• providing a first semiconductor structure having a first device length and including a diffusion region having a diffusion width;
• determining the diffusion width of the diffusion region of the first semiconductor structure;
• providing a second semiconductor structure having a second device length and including a first refractory metal silicide structure having a first width and a first spacer having a spacer width;
• determining the spacer width;
• providing a third semiconductor structure having a third device length and including a second refractory metal silicide structure having a second width and a second spacer of the spacer width, the second width being less than the first width, the first refractory metal silicide structure and the second refractory metal silicide structure being formed of the same refractory metal silicide;
• and
• determining the second width using at least the determined diffusion width and the determined spacer width.

A method of determining the width of an insulative spacer of a semiconductor device, comprising:

• providing a first semiconductor structure comprising a first diffusion region, the first semiconductor structure having a device width;
• providing a second semiconductor structure of the device width and comprising a refractory metal silicide structure, a second diffusion region and the insulative spacer;
• determining the device width;
• determining the width of the refractory metal silicide structure;
• determining the diffusion width of the second diffusion region;
• and
• subtracting the width of the refractory metal silicide structure and the diffusion width of the second diffusion region from the device width.

A method of determining parameters of a semiconductor device comprising a refractory metal silicide, the method comprising the steps of:

• providing a diffusion test structure having a first sheet resistance;
• providing a refractory metal silicide test structure having a second sheet resistance;
• determining the first sheet resistance;
• determining the second sheet resistance;
• forming a first semiconductor structure having a device width and a first diffusion region;
• determining the width of the first diffusion region;
• forming a second semiconductor structure of the device width and having:
• a second diffusion region including a plurality of first parallel diffusion areas, a first refractory metal silicide structure having a width of at least 0.5 micron, and a first spacer having a spacer width;
• determining the measured resistance of the first refractory metal silicide structure;
• determining the measured resistance of the second diffusion region;
• determining the width of the first refractory metal silicide structure;
• determining the width of the second diffusion region;
• determining the spacer width;
• forming a third semiconductor structure of the device width and having:
• a third diffusion region including a plurality of second parallel diffusion areas, a second refractory metal silicide structure having a width less than 0.5 micron, and a second spacer of the spacer width, the first refractory metal silicide structure and the second refractory metal silicide structure being formed of the same refractory metal silicide;
• determining the measured resistance of the third diffusion region;
• determining the measured resistance of the second refractory metal silicide structure;
• determining the width of the third diffusion region;
• determining the width of the second refractory metal silicide structure;
• determining a difference between the width of the second refractory metal silicide structure and a width of a mask opening from which the second refractory metal silicide structure was patterned;
• and
• determining the refractory metal silicide sheet resistance of the second refractory metal silicide structure.