Metal-to-metal via-type antifuse

A programmed antifuse comprising:

• a lower electrode formed of a film of material including aluminum;
• a lower barrier metal layer disposed over and in electrical contact with said lower conductive layer, said lower barrier metal layer formed of TiN and having a first minimum thickness in the range of 1000 .ANG. to 2000 .ANG.;
• an antifuse material layer disposed over and in contact with said lower barrier metal layer;
• an upper barrier metal layer disposed over and in contact with said antifuse material layer, said upper barrier metal layer formed of TiN and having a second minimum thickness, said second minimum thickness being at least 1000 .ANG. and said first minimum thickness being greater than said second thickness;
• an upper electrode formed of a film of material including aluminum, said film disposed over and in electrical contact with said upper barrier metal layer;
• and
• a conductive link located within said antifuse material layer and electrically connecting said lower barrier metal layer and said upper barrier metal layer, said conductive link comprising substantially no aluminum metal.

An antifuse comprising:

• a lower conductive layer formed of a film of material including aluminum;
• a lower barrier metal layer disposed over and in electrical contact with said lower conductive layer, said lower barrier metal layer formed of TiN and having a first minimum thickness of greater than 2000 .ANG.;
• an antifuse material layer disposed over and in contact with said lower barrier metal layer;
• an upper barrier metal layer disposed over and in contact with said antifuse material layer, said upper barrier metal layer formed of TiN and having a second minimum thickness, said second minimum thickness being in the range of 1000 .ANG.-2000 .ANG.;
• an upper conductive layer formed of a film of material including aluminum, said film disposed over and in electrical contact with said upper barrier metal layer;
• and
• programming means for programming the antifuse, said programming means including a power supply capable of applying:
• a first programming signal between said lower conductive layer and said upper conductive layer for a first period of time, a voltage induced on said upper conductive layer referenced to said lower conductive layer being positive;
• a second programming signal between said lower conductive layer and said upper conductive layer for a second period of time after said first period of time, a voltage induced on said lower conductive layer referenced to said upper conductive layer being negative and the amplitude of said voltage being less than the amplitude of said voltage applied in said first programming signal;
• a third programming signal for a third period of time after said second period of time, said third programming signal equivalent to said first programming signal;
• and
• a fourth programming signal for a fourth period of time after said third period of time, said fourth programming signal equivalent to said second programming signal.

An antifuse comprising:

• a lower conductive layer formed of a film of material including aluminum;
• a lower barrier metal layer disposed over and in electrical contact with said lower conductive layer, said lower barrier metal layer formed of TiN and having a first minimum thickness in the range of 1000 .ANG.-2000 .ANG.;
• an antifuse material layer disposed over and in contact with said lower barrier metal layer;
• an upper barrier metal layer disposed over and in contact with said antifuse material layer, said upper barrier metal layer formed of TiN and having a second minimum thickness, said second minimum thickness being greater than 2000 .ANG.;
• an upper conductive layer formed of a film of material including aluminum, said film disposed over and in electrical contact with said upper barrier metal layer;
• and
• programming means for programming the antifuse, said programming means including a power supply capable of applying:
• a first programming signal between said lower conductive layer and said upper conductive layer for a first period of time, a voltage induced on said upper conductive layer referenced to said upper conductive layer being positive;
• a second programming signal between said lower conductive layer and said upper conductive layer for a second period of time after said first period of time, a voltage induced on said upper conductive layer referenced to said upper conductive layer being negative and the amplitude of said voltage being less than the amplitude of said voltage applied in said first programming signal;
• a third programming signal for a third period of time after said second period of time, said third programming signal equivalent to said first programming signal;
• and
• a fourth programming signal for a fourth period of time after said third period of time, said fourth programming signal equivalent to said second programming signal.

An unprogrammed antifuse disposed in an integrated circuit comprising:

• a lower conductive layer formed of a film of material including aluminum;
• a lower barrier metal layer disposed over and in electrical contact with said lower conductive layer, said lower barrier metal layer formed of TiN and having a first minimum thickness of greater than 2000 .ANG.;
• an antifuse material layer disposed over and in contact with said lower barrier metal layer;
• an upper barrier metal layer disposed over and in contact with said antifuse material layer, said upper barrier metal layer formed of TiN and having a second minimum thickness, said second minimum thickness being in the range of 1000 .ANG.-2000 .ANG.;
• an upper conductive layer formed of a film of material including aluminum, said film disposed over and in electrical contact with said upper barrier metal layer;
• and
• said unprogrammed antifuse designed to be programmed by applying a programming signal between said lower conductive layer and said upper conductive layer, a voltage induced on said lower conductive layer referenced to said lower conductive layer being positive, such that said programming signal induces metal from said lower barrier metal later and said upper barrier metal later into said antifuse material layer, forming a conductive link between said lower barrier metal layer and said upper barrier metal layer, said conductive link containing substantially no aluminum.

An unprogrammed antifuse disposed in an integrated circuit comprising:

• a lower conductive layer formed of a film of material including aluminum;
• a lower barrier metal layer disposed over and in electrical contact with said lower conductive link, said lower barrier metal layer formed of TiN and having a first minimum thickness in the range of about 1000 .ANG. to about 2000 .ANG.;
• an antifuse material layer disposed over and in contact with said lower barrier metal layer;
• an upper barrier metal layer disposed over and in contact with said antifuse material layer, said upper barrier metal layer formed of TiN and having a second minimum thickness of greater than 2000 .ANG.;
• and
• an upper conductive layer formed of a film of material including aluminum, said film disposed over and in electrical contact with said upper barrier metal layer;
• and
• said unprogrammed antifuse designed to be programmed by applying a programming signal between said lower conductive layer and said upper conductive layer, a voltage induced on said lower conductive layer referenced to said upper conductive layer being positive, such that said programming signal induces metal from said lower barrier metal later and said upper barrier metal later into said antifuse material layer, forming a conductive link within said antifuse material layer electrically connecting said lower barrier metal layer and said upper barrier metal layer, said conductive link containing substantially no aluminum.

An unprogrammed antifuse disposed in an integrated circuit comprising:

• a lower conductive layer formed of a film of material including aluminum;
• a lower barrier metal layer disposed over and in electrical contact with said lower conductive layer, said lower barrier metal layer formed of TiN and having a first minimum thickness of at least about 2000 .ANG.;
• an antifuse material layer disposed over and in contact with said lower barrier metal layer;
• an upper barrier metal layer disposed over and in contact with said antifuse material layer, said upper barrier metal layer formed of TiN and having a second minimum thickness greater than 2000 .ANG., said second minimum thickness being greater than said first minimum thickness;
• and
• an upper conductive layer formed of a film of material including aluminum, said film disposed over and in electrical contact with said upper barrier metal layer;
• and
• said unprogrammed antifuse designed to be programmed by applying either (1) a programming signal between said lower conductive layer and said upper conductive layer, a voltage induced on said lower conductive layer referenced to said lower conductive layer being positive, such that said programming signal induces metal from said lower barrier metal later and said upper barrier metal later into said antifuse material layer, forming a conductive link between said lower barrier metal layer and said upper barrier metal layer, said conductive link containing substantially no aluminum, or (2) a programming signal between said lower conductive layer and said upper conductive layer, a voltage induced on said lower conductive layer referenced to said upper conductive layer being positive, such that said programming signal induces metal from said lower barrier metal later and said upper barrier metal later into said antifuse material layer, forming a conductive link within said antifuse material layer electrically connecting said lower barrier metal layer and said upper barrier metal layer, said conductive link containing substantially no aluminum.